The material deformation modes of monocrystalline gallium antimonide (GaSb) under nano-scratching

Failure Modes of Perforated Material under Finite Deformation

Local deformation due to the interaction of small scale features such as voids or hard particles is expected to have a significant influence the failure mode of a material. To this end, the fracture pattern of a perforated aluminum sheet is studied experimentally and numerically using finite element models on two different length scales: a full-scale structural model and a local cell model base...

APPLIED PHYSICS REVIEWS The physics and technology of gallium antimonide: An emerging optoelectronic material

Recent advances in nonsilica fiber technology have prompted the development of suitable materials for devices operating beyond 1.55 mm. The III–V ternaries and quaternaries ~AlGaIn!~AsSb! lattice matched to GaSb seem to be the obvious choice and have turned out to be promising candidates for high speed electronic and long wavelength photonic devices. Consequently, there has been tremendous upth...

Deformation mechanisms at pop-out in monocrystalline silicon under nanoindentation

This paper clarifies a common misunderstanding of the phase transformation in monocrystalline silicon under nanoindentation, namely that a pop-out represents the onset of a phase transition. Through a detailed investigation into the indentation-induced deformation of monocrystalline silicon using a Berkovich indenter, it was found that a pop-out does not correspond to the onset of the transform...

Self- and Zinc Diffusion in Gallium Antimonide

Effects of frictional material properties on thermoelastic instability deformation modes

This paper deals with the effects of friction material properties on thermoelastic instability (TEI) and the associated dominant deformation mode. Both analytical and finite element models are constructed for determining the variation of the critical speed and the dominant TEI mode. Some important factors, e.g. the nonconductive friction material as well as the symmetric and anti-symmetric TEI ...